Magnetoresistive Random Access Memory (MRAM) is a non-volatile memory technology with properties that differentiate it from conventional silicon memory. The computer industry, would welcome MRAM as a replacement technology for EEPROM and FLASH and current DRAM, making all memory dense, fast and non-volatile.


"What makes Micromem interesting is the fact that it is targeting its products at the RFID market, the only MRAM firm we are aware of that is adopting such a strategy. There is no doubt that RFID is in need of a viable non-volatile memory solution and if Micromem can reach its objective it would find itself with a large addressable market for its products/technology."


"For the past five years, Micromem has been working on a version of magnetoresistive (or magnetic) random access memory (MRAM). By using a material's magnetic properties to store and process information instead of relying on a material's electronic properties, MRAM promises to provide a faster nonvolatile memory... than existing EEPROM and flash nonvolatile memory. MRAM is also a denser memory type, which means that an MRAM chip can offer a higher amount of storage capacity for its size than can chips using other existing memory technologies."