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MRAM represents performance memory technology.

The storage medium is a ferromagnetic bit fitted on a Hall sensor which senses magnetic field direction and stores information accordingly. MRAM is fabricated using III-V semiconductor technologies providing enhanced sensitivity for the sensor and the read element while maintaining radiation hard capabilities.

Micromem's research team, headed up by Dr. Harry Ruda of the University of Toronto, has demonstrated the ability to design and fabricate HCS MRAM. Our technology has been prototyped on the single bit level. The physics of Micromem's technology allows it to be easily scaled to multiple bits.

HCS MRAM is simple and robust.
  • Highly resilient
  • Traditional materials
  • Simple to fabricate
  • Meets the economics of our addressable markets
Micromem's technology is currently on the micron scale, which can be further reduced in size, making the memory denser and lower in power consumption.


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